SHALLOW DONORS IN HE-COOLED SEMICONDUCTORS USED FOR DETECTION AND FREE PATH DETERMINATION OF SINGLE PHONONSRIEHL N; BAUR G; MULLER A et al.1972; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1972; VOL. 14; NO 2; PP. 453-456; ABS. ALLEM.; BIBL. 4 REF.Serial Issue

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